Metal Organic Chemical Vapor Deposition (MOCVD) and Pulsed Laser Deposition (PLD) techniques have been used for the growth of CaCu3Ti4O12 (CCTO) thin films on La0.9Sr1.1NiO4/LaAlO3 (LSNO/LAO) stack. (1 0 0) oriented CCTO films have been formed through both deposition routes and film complete structural and morphological characterizations have been carried out using several techniques (X-ray diffraction, scanning electron microscopy, energy-filtered transmission electron microscopy). The comparative study demonstrated some differences at the CCTO/LSNO interfaces depending on the adopted deposition technique. Chemical/structural modification of the LSNO electrode probably occurred as a function of the different oxygen partial pressure used in the PLD and MOCVD processes. (C) 2012 Elsevier B.V. All rights reserved.
CaCu3Ti4O12 thin films on conductive oxide electrode: A comparative study between chemical and physical vapor deposition routes
MALANDRINO, Graziella;
2012-01-01
Abstract
Metal Organic Chemical Vapor Deposition (MOCVD) and Pulsed Laser Deposition (PLD) techniques have been used for the growth of CaCu3Ti4O12 (CCTO) thin films on La0.9Sr1.1NiO4/LaAlO3 (LSNO/LAO) stack. (1 0 0) oriented CCTO films have been formed through both deposition routes and film complete structural and morphological characterizations have been carried out using several techniques (X-ray diffraction, scanning electron microscopy, energy-filtered transmission electron microscopy). The comparative study demonstrated some differences at the CCTO/LSNO interfaces depending on the adopted deposition technique. Chemical/structural modification of the LSNO electrode probably occurred as a function of the different oxygen partial pressure used in the PLD and MOCVD processes. (C) 2012 Elsevier B.V. All rights reserved.File | Dimensione | Formato | |
---|---|---|---|
MatChemPhys.pdf
solo gestori archivio
Tipologia:
Versione Editoriale (PDF)
Licenza:
NON PUBBLICO - Accesso privato/ristretto
Dimensione
1.68 MB
Formato
Adobe PDF
|
1.68 MB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.