CeF3 thin films have been deposited on Si( 100) substrates by metal-organic chemical vapor deposition (MOCVD). The Ce(hfa)(3).diglyme [Hhfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, diglyme = (CH3O(CH2CH2O)(2)CH3)] precursor has been adopted as a single source for both Ce and F components. This adduct has proved to be a good and reliable precursor, suitable for evaporation from the liquid phase due to its rather low melting point (75 degreesC). The structural, compositional, morphological and spectroscopic properties of the films have been investigated by X-ray diffraction (XRD), wavelength dispersion X-ray analysis (WDX), scanning electron microscopy (SEM) and luminescence spectroscopy.
|Titolo:||MOCVD of CeF3 films on Si(100) substrates: synthesis, characterization and luminescence spectroscopy|
|Data di pubblicazione:||2002|
|Citazione:||MOCVD of CeF3 films on Si(100) substrates: synthesis, characterization and luminescence spectroscopy / Lo Nigro R; Malandrino G; Fragala IL; Bettinelli M; Speghini A. - In: JOURNAL OF MATERIALS CHEMISTRY. - ISSN 0959-9428. - 12:9(2002), pp. 2816-2819.|
|Appare nelle tipologie:||1.1 Articolo in rivista|