A non-invasive temperature sensing method for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction is proposed. The method is based on a compact sensing circuit that can be easily embedded in the package, allowing online temperature estimation. The effectiveness of the circuit has been confirmed by the analysis of a commercial SiC power module. The proposed temperature sensing strategy is fast, inexpensive, accurate, and non-invasive.

A non-invasive SiC MOSFET Junction temperature estimation method based on the transient light Emission from the intrinsic body diode

Susinni G.;Rizzo S. A.;Raciti A.
2020-01-01

Abstract

A non-invasive temperature sensing method for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction is proposed. The method is based on a compact sensing circuit that can be easily embedded in the package, allowing online temperature estimation. The effectiveness of the circuit has been confirmed by the analysis of a commercial SiC power module. The proposed temperature sensing strategy is fast, inexpensive, accurate, and non-invasive.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/489114
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