A non-invasive temperature sensing method for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction is proposed. The method is based on a compact sensing circuit that can be easily embedded in the package, allowing online temperature estimation. The effectiveness of the circuit has been confirmed by the analysis of a commercial SiC power module. The proposed temperature sensing strategy is fast, inexpensive, accurate, and non-invasive.
A non-invasive SiC MOSFET Junction temperature estimation method based on the transient light Emission from the intrinsic body diode
Susinni G.;Rizzo S. A.;Raciti A.
2020-01-01
Abstract
A non-invasive temperature sensing method for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction is proposed. The method is based on a compact sensing circuit that can be easily embedded in the package, allowing online temperature estimation. The effectiveness of the circuit has been confirmed by the analysis of a commercial SiC power module. The proposed temperature sensing strategy is fast, inexpensive, accurate, and non-invasive.File in questo prodotto:
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