We report on the design, fabrication, and electro-optical characterization of a light emitting device operating at 1.54 mu m, whose active layer consists of silicon oxide containing Er-doped Si nanoclusters. A photonic crystal (PhC) is fabricated on the top-electrode to enhance the light extraction in the vertical direction, and thus the external efficiency of the device. This occurs if a photonic mode of the PhC slab is resonant with the Er emission energy, as confirmed by theoretical calculations and experimental analyses. We measure an increase of the extraction efficiency by a factor of 3 with a high directionality of light emission in a narrow vertical cone. External quantum efficiency and power efficiency are among the highest reported for this kind of material. These results are important for the realization of CMOS-compatible efficient light emitters at telecom wavelengths. (C) 2014 AIP Publishing LLC.
|Titolo:||Photonic crystal light emitting diode based on Er and Si nanoclusters co-doped slot waveguide|
|Data di pubblicazione:||2014|
|Appare nelle tipologie:||1.1 Articolo in rivista|