This brief presents a fully CMOS voltage reference based on a self-biased topology, which provides low current consumption while saving silicon area. Temperature compensation is achieved by means of a subthreshold triode-based Widlar current reference and a proper arrangement of an active load. The proposed voltage reference was fabricated in a standard 0.13-μ m CMOS technology and occupies a core area as low as 0.003 mm2. The circuit properly operates with a power supply ranging from 2.4 V to 1.1 V while providing a reference voltage of around 800 mV with an average temperature coefficient of 100 ppm/°C and an overall current consumption below 25 nA. This performance makes the proposed voltage reference very suitable for RF-powered applications.
Nano-Power CMOS Voltage Reference for RF-Powered Systems
Palmisano G.
2018-01-01
Abstract
This brief presents a fully CMOS voltage reference based on a self-biased topology, which provides low current consumption while saving silicon area. Temperature compensation is achieved by means of a subthreshold triode-based Widlar current reference and a proper arrangement of an active load. The proposed voltage reference was fabricated in a standard 0.13-μ m CMOS technology and occupies a core area as low as 0.003 mm2. The circuit properly operates with a power supply ranging from 2.4 V to 1.1 V while providing a reference voltage of around 800 mV with an average temperature coefficient of 100 ppm/°C and an overall current consumption below 25 nA. This performance makes the proposed voltage reference very suitable for RF-powered applications.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
