Precursor mutual interactions in the kinetics of MOCVD of SBT films

This paper reports on deposition kinetics of SrBi2Ta2O9 (SBT) films grown with Sr(hfaC)(2)tetraglyme (H-hfac = 1,1,1,5,5,5-hexafluoroacetylacetone), Ta(OC2H5)(5) and Bi(C6H5)(3) precursors. The kinetics of MOCVD of SBT has been compared to the kinetics of single component films, to obtain information about mutual interactions among precursors. Deposition rate of SrF2 from Sr(hfaC)2tetraglyme is determined by surface reactions below 350degreesC, whereas its mass transport limited above this temperature. For the other two precursors, the deposition processes involve surface reactions in the overall investigated temperature range (200-550degreesC). With respect to the multi-component process, it has been found that the deposition kinetics of Sr(hfa)(2)tetraglyme is not significantly affected by the presence of the other two precursors. In contrast, close relations have been observed between Bi and Ta precursors, since a direct dependence between relative growth rates has been found. (C) 2002 Elsevier Science Ltd. All rights reserved.