We investigate critical current noise in short ballistic graphene Josephson junctions in the open-circuit gate-voltage limit within the McWorther model. We find flicker noise in a wide frequency range and discuss the temperature dependence of the noise amplitude as a function of the doping level. At the charge neutrality point we find a singular temperature dependence $T^{−3}$, strikingly different from the linear dependence expected for short ballistic graphene Josephson junctions under fixed gate voltage.
Low-frequency critical current noise in graphene Josephson junctions in the open-circuit gate voltage limit
Pellegrino F. M. D.;Falci G.;Paladino E.
2021-01-01
Abstract
We investigate critical current noise in short ballistic graphene Josephson junctions in the open-circuit gate-voltage limit within the McWorther model. We find flicker noise in a wide frequency range and discuss the temperature dependence of the noise amplitude as a function of the doping level. At the charge neutrality point we find a singular temperature dependence $T^{−3}$, strikingly different from the linear dependence expected for short ballistic graphene Josephson junctions under fixed gate voltage.File in questo prodotto:
File | Dimensione | Formato | |
---|---|---|---|
Pellegrino2021_Article_Low-frequencyCriticalCurrentNo.pdf
accesso aperto
Tipologia:
Documento in Post-print
Licenza:
Creative commons
Dimensione
367.95 kB
Formato
Adobe PDF
|
367.95 kB | Adobe PDF | Visualizza/Apri |
Low-frequency critical current noise in graphene Josephson junctions in the open-circuit gate voltage limit.pdf
accesso aperto
Tipologia:
Versione Editoriale (PDF)
Licenza:
Creative commons
Dimensione
304.39 kB
Formato
Adobe PDF
|
304.39 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.