We present a technique for hysteresis suppression in single-wall nanotube field effect transistors (SWNT-FETs) using chemical functionalization. We selectively modify the electrode surfaces and the device channel area with self-assembled monolayers (SAMs) of octanethiol and aminopropyltriethoxysilane (APTES), respectively. These can efficiently prevent surface adsorption of water molecules. We show that hysteresis is suppressed, with a 15 times decrease in hysteresis gap compared to the conventional SWNT-FETs on bare SiO2/Si. © 2007 Elsevier B.V. All rights reserved.
Hysteresis suppression in self-assembled single-wall nanotube field effect transistors
Scardaci V.Membro del Collaboration Group
;
2008-01-01
Abstract
We present a technique for hysteresis suppression in single-wall nanotube field effect transistors (SWNT-FETs) using chemical functionalization. We selectively modify the electrode surfaces and the device channel area with self-assembled monolayers (SAMs) of octanethiol and aminopropyltriethoxysilane (APTES), respectively. These can efficiently prevent surface adsorption of water molecules. We show that hysteresis is suppressed, with a 15 times decrease in hysteresis gap compared to the conventional SWNT-FETs on bare SiO2/Si. © 2007 Elsevier B.V. All rights reserved.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.