In this work, an investigation of the properties of nanoscale-thick Ti/TiN, TiN, W, WNlayers as diffusion barriers between Si and Al is carried out in view of Si-based electronic applications. Heat treatments were performed on the samples to activate interdiffusion between Si and Al. Changing annealing time and temperature, each sample was morphologically characterized by scanning electron microscopy and atomic force microscopy and compositionally characterized by Rutherford backscattering analysis. The aim is to evaluate the efficiency of the layers as diffusion barriers between Si and Al and, at the same time, to evaluate the surface morphological changes upon annealing processes.
Morphological and compositional studies on Al/Ti/TiN/Si, Al/TiN/Si, Al/W/Si, Al/WN/Si systems to test the diffusion barrier properties of nanoscale-thick layers between Al and Si
Censabella M.;Piccitto G.;Mirabella S.;Grimaldi M. G.;Ruffino F.
Ultimo
2021-01-01
Abstract
In this work, an investigation of the properties of nanoscale-thick Ti/TiN, TiN, W, WNlayers as diffusion barriers between Si and Al is carried out in view of Si-based electronic applications. Heat treatments were performed on the samples to activate interdiffusion between Si and Al. Changing annealing time and temperature, each sample was morphologically characterized by scanning electron microscopy and atomic force microscopy and compositionally characterized by Rutherford backscattering analysis. The aim is to evaluate the efficiency of the layers as diffusion barriers between Si and Al and, at the same time, to evaluate the surface morphological changes upon annealing processes.| File | Dimensione | Formato | |
|---|---|---|---|
|
micromachines-12-00849.pdf
accesso aperto
Descrizione: Articolo principale
Tipologia:
Versione Editoriale (PDF)
Dimensione
5.25 MB
Formato
Adobe PDF
|
5.25 MB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
