Heating effects in nanoscale devices can be described by the Bloch-Boltzmann- Peierls kinetic equations for the coupled system formed by electrons and phonons. A stochastic solution can be found by means of Electrothermal Monte Carlo simulations. Another alternative is to introduce Extended hydrodynamic models, on the basis of the Maximum Entropy Principle, in order to describe offequilibrium phenomena in silicon devices. With this procedure one obtains a closed system, with an energy phonon transport equation which is consistent with the thermodynamic principles. Simulation results for a 1D n+ − n − n+ silicon diode are presented.
|Titolo:||Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations|
|Data di pubblicazione:||2011|
|Citazione:||Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations / MUSCATO O; DI STEFANO V. - In: COMPEL. - ISSN 0332-1649. - 30:2(2011), pp. 519-537.|
|Appare nelle tipologie:||1.1 Articolo in rivista|