In this paper we present a hydrodynamical model which, in principle, is able to describe charge transport in a generic compound semiconductor. The model makes use of an analytic approximation for the conduction bands. Energy dispersion relationships in the neighbors (valleys) of the lowest minima are, in fact, taken to be spherical, nonparabolic. The model considers the main scattering mechanisms in polar semiconductors, that is the acoustic, polar optical, intervalley non-polar optical phonon interactions and the ionized impurity scattering. Simulations are shown for the cases of bulk GaN and SiC.

A Hydrodynamic Model for Covalent Semiconductors with Applications to GaN and SiC

ROMANO, Vittorio;
2012-01-01

Abstract

In this paper we present a hydrodynamical model which, in principle, is able to describe charge transport in a generic compound semiconductor. The model makes use of an analytic approximation for the conduction bands. Energy dispersion relationships in the neighbors (valleys) of the lowest minima are, in fact, taken to be spherical, nonparabolic. The model considers the main scattering mechanisms in polar semiconductors, that is the acoustic, polar optical, intervalley non-polar optical phonon interactions and the ionized impurity scattering. Simulations are shown for the cases of bulk GaN and SiC.
Compound semiconductors ; Hydrodynamical models ; Maximum entropy principle
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/51397
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