Performance Analysis of Merged p-i-n Schottky Diodes with Doping Compensation of the Drift Region

In this paper, standard-cell Schottky rectifiers along with silicon-based merged p-i-n–Schottky (MPS) and p-i-n diodes, which are realized using a super junction technology, have been analyzed and compared by conducting extensive device and mixed-mode simulations through a 2-D finite-element grid. The main issues that concern these devices, such as the forward voltage drop, the leakage characteristic, and the reverse recovery, are treated, and the superior performances exhibited by the MPS rectifier with respect to the p-i-n diodes are experimentally validated. First, the basics on the used technology are reported by focusing on the high voltage capability of the new devices along with the low forward voltage drop during the ON-state conduction. The reverse-recovery behavior belonging to the MPS diode has been analyzed by exploring through several simulations the internal plasma dynamics. 2-D simulations of the turn-on behavior relative to the Schottky, p-i-n, and MPS rectifiers have been carried out in order to analyze the effects of the voltage overshoot phenomenon eventually occurring in the three diode structures.