We present results of a discontinuous Galerkin scheme applied to deterministic computations of the transients for the Boltzmann-Poisson system describing electron transport in semiconductor devices. The collisional term models optical-phonon interactions which become dominant under strong energetic conditions corresponding to nanoscale active regions under applied bias. The proposed numerical technique is a ﬁnite element method using discontinuous piecewise polynomials as basis functions on unstructured meshes. It is applied to simulate hot electron transport in bulk silicon, in a silicon n+ - n - n+ diode and in a double gated 12 nm MOSFET. Additionally, the obtained results are compared to those of a high order WENO scheme simulation.
|Titolo:||Discontinuous Galerkin Solver for Boltzmann-Poisson Transients|
|Data di pubblicazione:||2008|
|Citazione:||Discontinuous Galerkin Solver for Boltzmann-Poisson Transients / CHENG Y; GAMBA I; MAJORANA A; SHU C-W. - In: JOURNAL OF COMPUTATIONAL ELECTRONICS. - ISSN 1569-8025. - 7(2008), pp. 119-123.|
|Appare nelle tipologie:||1.1 Articolo in rivista|