Interstrip and backplane capacitances on silicon microstrip detectors with p(+) strip on n substrate of 320 mu m thickness were measured for pitches between 60 and 240 mu m and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of 4 x 10(14) protons/cm(2) of 24 GeV/e momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a [1 0 0] substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence of having a metal strip larger than the p(+) implant has been studied and found to enhance the stability. (C) 2000 Elsevier Science B.V. All rights reserved. RI Krammer, Manfred/A-6508-2010; Servoli, Leonello/E-6766-2012; Azzi, Patrizia/H-5404-2012
New results on silicon microstrip detectors of CMS tracker
ALBERGO, Sebastiano Francesco;TRICOMI, Alessia Rita;
2000-01-01
Abstract
Interstrip and backplane capacitances on silicon microstrip detectors with p(+) strip on n substrate of 320 mu m thickness were measured for pitches between 60 and 240 mu m and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of 4 x 10(14) protons/cm(2) of 24 GeV/e momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a [1 0 0] substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence of having a metal strip larger than the p(+) implant has been studied and found to enhance the stability. (C) 2000 Elsevier Science B.V. All rights reserved. RI Krammer, Manfred/A-6508-2010; Servoli, Leonello/E-6766-2012; Azzi, Patrizia/H-5404-2012I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
