Monolayer field-effect transistors based on a high-mobility n-type polymer are demonstrated. The accurate control of the long-range order by Langmuir-Schafer (LS) deposition yields dense polymer packing exhibiting good injection properties, relevant current on/off ratio and carrier mobility in a staggered configuration. Layer-by-layer LS film transistors of increasing thickness are fabricated and their performance compared to those of spin-coated films.

From monolayer to multilayer N-channel polymeric field-effect transistors with precise conformational order

Scandurra, Antonino
Investigation
;
Pignataro, Bruno
Conceptualization
2012-01-01

Abstract

Monolayer field-effect transistors based on a high-mobility n-type polymer are demonstrated. The accurate control of the long-range order by Langmuir-Schafer (LS) deposition yields dense polymer packing exhibiting good injection properties, relevant current on/off ratio and carrier mobility in a staggered configuration. Layer-by-layer LS film transistors of increasing thickness are fabricated and their performance compared to those of spin-coated films.
2012
monolayer field-effect transistor
semiconducting polymers
layered materials
charge transport
Naphthalenes
Polymers
Thiophenes
Transistors, Electronic
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/534744
Citazioni
  • ???jsp.display-item.citation.pmc??? 5
  • Scopus 110
  • ???jsp.display-item.citation.isi??? 109
social impact