The electrical behaviour of ion implanted aluminum into silicon was investigated by varying the beam energy in the 80 keV-6 MeV range, the dose in the 1 x 10(13)-1 x 10(15)/cm2 range and the annealing procedure. Aluminum atoms precipitate into extended defects at the end of range damage and where the concentration exceeds the solid solubility value (about 2 x 10(19)/cm3 at 1200-degrees-C). Escape of Al atoms occurs very easily as soon as they reach the external surface during the thermal diffusion. Using high energy implants, 6 MeV, it was possible to follow in detail the broadening of the diffused profiles. The measured trends between the retained dose and the junction depth and between the outdiffused dose and the annealing time are quite well predicted by the solution of the diffusion equation with the surface acting as a perfect sink for the dopant.
IMPLANTS OF ALUMINUM INTO SILICON
SCANDURRA, AInvestigation
;RIMINI, E;
1993-01-01
Abstract
The electrical behaviour of ion implanted aluminum into silicon was investigated by varying the beam energy in the 80 keV-6 MeV range, the dose in the 1 x 10(13)-1 x 10(15)/cm2 range and the annealing procedure. Aluminum atoms precipitate into extended defects at the end of range damage and where the concentration exceeds the solid solubility value (about 2 x 10(19)/cm3 at 1200-degrees-C). Escape of Al atoms occurs very easily as soon as they reach the external surface during the thermal diffusion. Using high energy implants, 6 MeV, it was possible to follow in detail the broadening of the diffused profiles. The measured trends between the retained dose and the junction depth and between the outdiffused dose and the annealing time are quite well predicted by the solution of the diffusion equation with the surface acting as a perfect sink for the dopant.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
