A finite difference scheme of Scharfetter–Gummel type is used to simulate a consistent energy-transport model for electron transport in semiconductors devices, free of any fitting parameters, formulated on the basis of the maximum entropy principle. Simulations of silicon n+–n–n+ diodes, 2D-MESFET and 2D-MOSFET and comparisons with the results obtained by a direct simulation of the Boltzmann transport equation and with other energy-transport models, known in the literature, show the validity of the model and the robustness of the numerical scheme.
|Titolo:||2D numerical simulation of the MEP energy-transprot model with a finite difference scheme|
|Data di pubblicazione:||2007|
|Appare nelle tipologie:||1.1 Articolo in rivista|