A finite difference scheme of Scharfetter–Gummel type is used to simulate a consistent energy-transport model for electron transport in semiconductors devices, free of any fitting parameters, formulated on the basis of the maximum entropy principle. Simulations of silicon n+–n–n+ diodes, 2D-MESFET and 2D-MOSFET and comparisons with the results obtained by a direct simulation of the Boltzmann transport equation and with other energy-transport models, known in the literature, show the validity of the model and the robustness of the numerical scheme.
Titolo: | 2D numerical simulation of the MEP energy-transprot model with a finite difference scheme |
Autori interni: | |
Data di pubblicazione: | 2007 |
Rivista: | |
Handle: | http://hdl.handle.net/20.500.11769/5515 |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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