Study of the interstrip gap effects on the response of Double Sided Silicon Strip Detectors using proton micro-beams

Double Sided Silicon Strip Detectors (DSSSDs) are segmented silicon detectors widely used for the detection of charged particles. When a charged particle hits the gap between two adjacent strips, a signal, different from the full energy one, can be generated, resulting in an incorrect energy information. With the purpose of studying inter-strip effects on the detector response, an experiment was performed using a proton micro-beam. The response of two DSSSDs, 75 and 998μm thick, was measured as a function of the proton impact position, beam energy and bias voltage using a low intensity proton micro-beam of about few hundred particles per second (pps). Results show that the effective width of the inter-strip region, which in turn is related to the efficiency for full energy detection, varies with both detected energy and bias voltage. The experimental results are interpreted within a simplified model.