The Multicomb variance reduction technique has been introduced in the Direct Simulation Monte Carlo for submicrometric semiconductors. We have implemented the method in a silicon diode n+ − n − n+ and demonstrated its effectiveness. The steady-state statistical error and the figures of merit are obtained. The results of the simulations indicate that the method can enhance the high-energy distribution tail with a good accuracy

A statistical enhancement method for Direct Simulation Monte Carlo in semiconductor devices

MUSCATO, Orazio;DI STEFANO, VINCENZA
2010-01-01

Abstract

The Multicomb variance reduction technique has been introduced in the Direct Simulation Monte Carlo for submicrometric semiconductors. We have implemented the method in a silicon diode n+ − n − n+ and demonstrated its effectiveness. The steady-state statistical error and the figures of merit are obtained. The results of the simulations indicate that the method can enhance the high-energy distribution tail with a good accuracy
2010
Monte Carlo Methods; semiconductors; variance reduction
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/5558
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