A voltage reference generator in GaN IC technology for smart power applications is described, analyzed, and simulated. A straightforward design procedure is also highlighted. Compared to previous low-power monolithic solutions, the proposed one is based on a single branch and on transistors operating in a subthreshold. The circuit provides a nearly 2.7 V reference voltage under 4 V to 24 V supply at room temperature and with typical transistor models. The circuit exhibits a good robustness against large process variations and improves line regulation (0.105 %V) together with a reduction in area occupation (0.05 mm2), with a reduced current consumption of 2.7 µA (5 µA) in the typical (worst) case, independent of supply. The untrimmed temperature coefficient is 200 ppm/◦C.

Single-Branch Wide-Swing-Cascode Subthreshold GaN Monolithic Voltage Reference

Pennisi S.
;
2022-01-01

Abstract

A voltage reference generator in GaN IC technology for smart power applications is described, analyzed, and simulated. A straightforward design procedure is also highlighted. Compared to previous low-power monolithic solutions, the proposed one is based on a single branch and on transistors operating in a subthreshold. The circuit provides a nearly 2.7 V reference voltage under 4 V to 24 V supply at room temperature and with typical transistor models. The circuit exhibits a good robustness against large process variations and improves line regulation (0.105 %V) together with a reduction in area occupation (0.05 mm2), with a reduced current consumption of 2.7 µA (5 µA) in the typical (worst) case, independent of supply. The untrimmed temperature coefficient is 200 ppm/◦C.
2022
AlGaN/GaN HEMT
planar integration
smart power
voltage reference
wide bandgap
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/583972
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