An experimental study via X-ray photoelectron spectroscopy at different takeoff angles of the derivatization of atomically flat, hydrogen terminated, 1 x 1 (1 0 0) Si surfaces with 1-octyne is reported. The major conclusion of the experimental analysis (that a large fraction of the grafted moieties contain unreacted pi bonds) is then compared with the results of high-level ab initio modelling with model molecules of the derivatization act. (c) 2004 Elsevier B.V. All rights reserved.
Functionalization of atomically flat, dihydrogen terminated, 1x1(100) silicon via reaction with 1-alkyne
CONDORELLI, Guglielmo Guido;
2005-01-01
Abstract
An experimental study via X-ray photoelectron spectroscopy at different takeoff angles of the derivatization of atomically flat, hydrogen terminated, 1 x 1 (1 0 0) Si surfaces with 1-octyne is reported. The major conclusion of the experimental analysis (that a large fraction of the grafted moieties contain unreacted pi bonds) is then compared with the results of high-level ab initio modelling with model molecules of the derivatization act. (c) 2004 Elsevier B.V. All rights reserved.File in questo prodotto:
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