Silicon PhotoMultipliers, SiPMs, constitute the enabling technology for a diverse and rapidly growing range of applications: medical imaging, experimental physics, and commercial applications are only a few examples. In this work, a characterization protocol for SiPM qualification has been applied to Hamamatsu S13161-3050AE-08 SiPM (8 × 8) array in the (−40 ÷ +30) °C temperature range. The protocol foresees to measure several parameters: breakdown voltage, quenching resistance, gain, dark count rate and probability of cross-talk. Methods to extract them and their dependence on temperature at fixed overvoltage are shown and the results are discussed.

Characterization of Hamamatsu S13161-3050AE-08 SiPM (8 × 8) array at different temperatures with CAEN DT5202

Persiani R.;Lombardo C.
;
Millesoli S.;Tortorici F.;Cappuzzello F.;Caruso R.;Petta C. M. A.;Tuve C.
2023-01-01

Abstract

Silicon PhotoMultipliers, SiPMs, constitute the enabling technology for a diverse and rapidly growing range of applications: medical imaging, experimental physics, and commercial applications are only a few examples. In this work, a characterization protocol for SiPM qualification has been applied to Hamamatsu S13161-3050AE-08 SiPM (8 × 8) array in the (−40 ÷ +30) °C temperature range. The protocol foresees to measure several parameters: breakdown voltage, quenching resistance, gain, dark count rate and probability of cross-talk. Methods to extract them and their dependence on temperature at fixed overvoltage are shown and the results are discussed.
2023
Breakdown voltage
Dark count rate
Gain
Probability of cross-talk
Quenching resistance
SiPM characterization
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/585754
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