Silicon PhotoMultipliers, SiPMs, constitute the enabling technology for a diverse and rapidly growing range of applications: medical imaging, experimental physics, and commercial applications are only a few examples. In this work, a characterization protocol for SiPM qualification has been applied to Hamamatsu S13161-3050AE-08 SiPM (8 × 8) array in the (−40 ÷ ＋30) °C temperature range. The protocol foresees to measure several parameters: breakdown voltage, quenching resistance, gain, dark count rate and probability of cross-talk. Methods to extract them and their dependence on temperature at fixed overvoltage are shown and the results are discussed.
Characterization of Hamamatsu S13161-3050AE-08 SiPM (8 × 8) array at different temperatures with CAEN DT5202
Persiani R.Primo
;Lombardo C.
Secondo
;Millesoli S.;Tortorici F.;Albergo S.;Cappuzzello F.;Caruso R.;Petta C. M. A.Penultimo
;Tuve C.Ultimo
2023-01-01
Abstract
Silicon PhotoMultipliers, SiPMs, constitute the enabling technology for a diverse and rapidly growing range of applications: medical imaging, experimental physics, and commercial applications are only a few examples. In this work, a characterization protocol for SiPM qualification has been applied to Hamamatsu S13161-3050AE-08 SiPM (8 × 8) array in the (−40 ÷ ＋30) °C temperature range. The protocol foresees to measure several parameters: breakdown voltage, quenching resistance, gain, dark count rate and probability of cross-talk. Methods to extract them and their dependence on temperature at fixed overvoltage are shown and the results are discussed.| File | Dimensione | Formato | |
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