Silicon PhotoMultipliers, SiPMs, constitute the enabling technology for a diverse and rapidly growing range of applications: medical imaging, experimental physics, and commercial applications are only a few examples. In this work, a characterization protocol for SiPM qualification has been applied to Hamamatsu S13161-3050AE-08 SiPM (8 × 8) array in the (−40 ÷ ＋30) °C temperature range. The protocol foresees to measure several parameters: breakdown voltage, quenching resistance, gain, dark count rate and probability of cross-talk. Methods to extract them and their dependence on temperature at fixed overvoltage are shown and the results are discussed.
Characterization of Hamamatsu S13161-3050AE-08 SiPM (8 × 8) array at different temperatures with CAEN DT5202
Persiani R.;Lombardo C.
;Millesoli S.;Tortorici F.;Cappuzzello F.;Caruso R.;Petta C. M. A.;Tuve C.
2023-01-01
Abstract
Silicon PhotoMultipliers, SiPMs, constitute the enabling technology for a diverse and rapidly growing range of applications: medical imaging, experimental physics, and commercial applications are only a few examples. In this work, a characterization protocol for SiPM qualification has been applied to Hamamatsu S13161-3050AE-08 SiPM (8 × 8) array in the (−40 ÷ ＋30) °C temperature range. The protocol foresees to measure several parameters: breakdown voltage, quenching resistance, gain, dark count rate and probability of cross-talk. Methods to extract them and their dependence on temperature at fixed overvoltage are shown and the results are discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
