Purpose - On the basis of the maximum entropy principle, seeks to formulate a hydrodynamical model for electron transport in GaAs semiconductors, which is free of any fitting parameter. Design/methodology/approach - The model considers the conduction band to be described by the Kane dispersion relation and includes both Γ and L valleys. Takes into account electron-non-polar optical phonon, electron-polar optical phonon and electro-acoustic phonon scattering. Findings - The set of balance equation of the model forms a quasilinear hyperbolic system and for its numerical integration a recent high-order shock-capturing central differencing scheme has been employed. Originality/value - Presents the results of simulations of n+ -n-n+ GaAs diode and Gunn oscillator.
|Titolo:||Simulation of Gunn oscillations with a non-parabolic hydrodynamical model based on the maximum entropy principle|
|Autori interni:||ROMANO, Vittorio|
|Data di pubblicazione:||2005|
|Appare nelle tipologie:||1.1 Articolo in rivista|