We present an experiment that gives insight into the origin of the dependence of the hole mobility (mu) on the dopant species in heavily doped p-type Si under low electrical field. The Hall carrier concentration and mobility were measured in Si coimplanted with B and Ga in the 0.1-2x10(20) cm(-3) concentration range. The strain induced by substitutional dopants, detected by high resolution x-ray diffraction, was varied by changing the relative B and Ga concentration. The effect of strain on mobility was disentangled and a linear relationship between 1/mu and the perpendicular strain was found.
|Titolo:||Effect of strain on the carrier mobility in heavily doped p-type Si|
|Data di pubblicazione:||2006|
|Appare nelle tipologie:||1.1 Articolo in rivista|