A molecular-module comprising of a surface-confined optically rich and redox active homobimetallic chromophore on siloxane-based templates, has been obtained and characterized via X-ray photoelectron spectroscopy, atomic force microscopy, UV−vis measurements, and cyclic voltammetry. The multimetallic system offers high order optical/redox “writeread” for viable chip-engineering. In fact, this system proposes a potential platform to save a high charge/information density of ∼3.6 × 1014 electrons/ cm2 as a function of the applied potential. Moreover, the convenient synthetic pathway, and the manipulation of Ru2+/Ru3+ redox wave into multiple intermediate mixed valence redox states, are the significant advantages with respect to heterobimetallic analogs toward its integration in “multi-memory” systems. Notably, the module exhibits a high charge density storage capacity, is robust against a large no. of redox cycles and high temperatures.

Chromogenic Homo-Dinuclear Ruthenium(II) Monolayer as a Tunable Molecular Memory Module for Multibit Information Storage.

GULINO, Antonino
2015

Abstract

A molecular-module comprising of a surface-confined optically rich and redox active homobimetallic chromophore on siloxane-based templates, has been obtained and characterized via X-ray photoelectron spectroscopy, atomic force microscopy, UV−vis measurements, and cyclic voltammetry. The multimetallic system offers high order optical/redox “writeread” for viable chip-engineering. In fact, this system proposes a potential platform to save a high charge/information density of ∼3.6 × 1014 electrons/ cm2 as a function of the applied potential. Moreover, the convenient synthetic pathway, and the manipulation of Ru2+/Ru3+ redox wave into multiple intermediate mixed valence redox states, are the significant advantages with respect to heterobimetallic analogs toward its integration in “multi-memory” systems. Notably, the module exhibits a high charge density storage capacity, is robust against a large no. of redox cycles and high temperatures.
Ruthenium; monolayer; Memory Module
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/62873
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