Epitaxial ErSi2-x thin films have been grown by the reactive deposition epitaxy technique on [111]Si substrate at a pressure of similar to 10(-8) Torr in a controlled atmosphere. A close relation between the O partial pressure during deposition and the crystalline quality of the silicide film has been observed and good quality epitaxial ErSi2-x layers have been obtained if O is incorporated in the silicide layer at a concentration of similar to 7 at. %. (C) 1995 American Institute of Physics.
INFLUENCE OF OXYGEN ON THE FORMATION OF EPITAXIAL ERBIUM SILICIDE FILM ON [111]SI
GRIMALDI, Maria Grazia;
1995-01-01
Abstract
Epitaxial ErSi2-x thin films have been grown by the reactive deposition epitaxy technique on [111]Si substrate at a pressure of similar to 10(-8) Torr in a controlled atmosphere. A close relation between the O partial pressure during deposition and the crystalline quality of the silicide film has been observed and good quality epitaxial ErSi2-x layers have been obtained if O is incorporated in the silicide layer at a concentration of similar to 7 at. %. (C) 1995 American Institute of Physics.File in questo prodotto:
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