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EnglishWe have investigated the room temperature diffusion and trapping phenomena of ion-generated point defects in crystalline Si. The point defects, injected by low energy Si, Ge, and Pt implants into the bulk of silicon wafers, were monitored measuring the defect-induced dopant deactivation by spreading resistance profiling. Dopant deactivation is detected up to depths of several microns beyond the region directly modified by the ions; It is demonstrated that long-range migration of Si self-interstitials is responsible for the observed phenomena.
| Titolo: | Trap-limited migration of Si self-interstitials at room temperature |
| Autori interni: | |
| Data di pubblicazione: | 1996 |
| Rivista: | |
| Citazione: | Trap-limited migration of Si self-interstitials at room temperature / Larsen KK; Privitera V; Coffa S; Priolo F; Campisano SU; Carnera A. - 76:9(1996), pp. 1493-1496. |
| Abstract: | We have investigated the room temperature diffusion and trapping phenomena of ion-generated point defects in crystalline Si. The point defects, injected by low energy Si, Ge, and Pt implants into the bulk of silicon wafers, were monitored measuring the defect-induced dopant deactivation by spreading resistance profiling. Dopant deactivation is detected up to depths of several microns beyond the region directly modified by the ions; It is demonstrated that long-range migration of Si self-interstitials is responsible for the observed phenomena. |
| Handle: | http://hdl.handle.net/20.500.11769/68190 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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