We have investigated the room temperature diffusion and trapping phenomena of ion-generated point defects in crystalline Si. The point defects, injected by low energy Si, Ge, and Pt implants into the bulk of silicon wafers, were monitored measuring the defect-induced dopant deactivation by spreading resistance profiling. Dopant deactivation is detected up to depths of several microns beyond the region directly modified by the ions; It is demonstrated that long-range migration of Si self-interstitials is responsible for the observed phenomena.
Trap-limited migration of Si self-interstitials at room temperature
PRIOLO, Francesco;
1996-01-01
Abstract
We have investigated the room temperature diffusion and trapping phenomena of ion-generated point defects in crystalline Si. The point defects, injected by low energy Si, Ge, and Pt implants into the bulk of silicon wafers, were monitored measuring the defect-induced dopant deactivation by spreading resistance profiling. Dopant deactivation is detected up to depths of several microns beyond the region directly modified by the ions; It is demonstrated that long-range migration of Si self-interstitials is responsible for the observed phenomena.File in questo prodotto:
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