DOPANT, DEFECTS AND OXYGEN INTERACTION IN MEV IMPLANTED CZOCHRALSKI SILICON

LAFERLA, A; GALVAGNO, G; RAINERI, V; PRIOLO, Francesco; CARNERA, A; GASPAROTTO, A; RIMINI, E.

doi:10.1016/0168-583X(94)00489-7

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An oxygen precipitation phenomenon was evidenced on high energy implanted Czochralski silicon samples. Al, Si, P, O and C ions with energies in the 1-6.8 MeV range and doses in the 4 X 10(14) - 1 X 10(15)/cm(2) range were single or double implanted in CZ-Si. A strong interaction was evidenced between the implanted species, the damage and the oxygen present in the substrates after annealing at 1100 or 1200 degrees C for 30 min. The oxygen precipitation is greatly enhanced by the presence of Al that interacting with O results almost completely electrically inactive.

Titolo:	DOPANT, DEFECTS AND OXYGEN INTERACTION IN MEV IMPLANTED CZOCHRALSKI SILICON
Autori interni:	LAFERLA A GALVAGNO G RAINERI V PRIOLO, Francesco CARNERA A GASPAROTTO A RIMINI E. mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	1995
Rivista:	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Abstract:	An oxygen precipitation phenomenon was evidenced on high energy implanted Czochralski silicon samples. Al, Si, P, O and C ions with energies in the 1-6.8 MeV range and doses in the 4 X 10(14) - 1 X 10(15)/cm(2) range were single or double implanted in CZ-Si. A strong interaction was evidenced between the implanted species, the damage and the oxygen present in the substrates after annealing at 1100 or 1200 degrees C for 30 min. The oxygen precipitation is greatly enhanced by the presence of Al that interacting with O results almost completely electrically inactive.
Handle:	http://hdl.handle.net/20.500.11769/68192
Appare nelle tipologie:	1.1 Articolo in rivista

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