CINECA IRIS Institutional Research Information System
IRIS è la soluzione IT che facilita la raccolta e la gestione dei dati relativi alle attività e ai prodotti della ricerca. Fornisce a ricercatori, amministratori e valutatori gli strumenti per monitorare i risultati della ricerca, aumentarne la visibilità e allocare in modo efficace le risorse disponibili.
EnglishAn oxygen precipitation phenomenon was evidenced on high energy implanted Czochralski silicon samples. Al, Si, P, O and C ions with energies in the 1-6.8 MeV range and doses in the 4 X 10(14) - 1 X 10(15)/cm(2) range were single or double implanted in CZ-Si. A strong interaction was evidenced between the implanted species, the damage and the oxygen present in the substrates after annealing at 1100 or 1200 degrees C for 30 min. The oxygen precipitation is greatly enhanced by the presence of Al that interacting with O results almost completely electrically inactive.
| Titolo: | DOPANT, DEFECTS AND OXYGEN INTERACTION IN MEV IMPLANTED CZOCHRALSKI SILICON |
| Autori interni: | |
| Data di pubblicazione: | 1995 |
| Rivista: | |
| Abstract: | An oxygen precipitation phenomenon was evidenced on high energy implanted Czochralski silicon samples. Al, Si, P, O and C ions with energies in the 1-6.8 MeV range and doses in the 4 X 10(14) - 1 X 10(15)/cm(2) range were single or double implanted in CZ-Si. A strong interaction was evidenced between the implanted species, the damage and the oxygen present in the substrates after annealing at 1100 or 1200 degrees C for 30 min. The oxygen precipitation is greatly enhanced by the presence of Al that interacting with O results almost completely electrically inactive. |
| Handle: | http://hdl.handle.net/20.500.11769/68192 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/20.500.11769/68192
Copyright © 2021