We evaluate the optical reflectivity for a uniaxially strained graphene single layer between a SiO2 substrate and air. A tight binding model for the band dispersion of graphene is employed. As a function of strain modulus and direction, graphene may traverse one of several electronic topological transitions, characterized by a change of topology of its Fermi line. This results in features in the conductivity within the optical range, which might be observable experimentally.
|Titolo:||Effect of uniaxial strain on the reflectivity of graphene|
|Data di pubblicazione:||2009|
|Citazione:||Effect of uniaxial strain on the reflectivity of graphene / PELLEGRINO F.M.D; ANGILELLA G.G.N.; PUCCI R. - In: HIGH PRESSURE RESEARCH. - ISSN 0895-7959. - 29:4(2009), pp. 569-572.|
|Appare nelle tipologie:||1.1 Articolo in rivista|