We evaluate the optical reflectivity for a uniaxially strained graphene single layer between a SiO2 substrate and air. A tight binding model for the band dispersion of graphene is employed. As a function of strain modulus and direction, graphene may traverse one of several electronic topological transitions, characterized by a change of topology of its Fermi line. This results in features in the conductivity within the optical range, which might be observable experimentally.
Effect of uniaxial strain on the reflectivity of graphene
PELLEGRINO F. M. D;ANGILELLA, Giuseppe Gioacchino Neil;
2009-01-01
Abstract
We evaluate the optical reflectivity for a uniaxially strained graphene single layer between a SiO2 substrate and air. A tight binding model for the band dispersion of graphene is employed. As a function of strain modulus and direction, graphene may traverse one of several electronic topological transitions, characterized by a change of topology of its Fermi line. This results in features in the conductivity within the optical range, which might be observable experimentally.File in questo prodotto:
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