Silicon carbide (SiC) power MOSFETs use in different fields of application leads to increase the attention on reliability issues and long-term stability. Among these, threshold voltage (Vth) stability is one of the main topics. In this work, we have carried out dynamic gate stress (DGS) reliability tests on an automotive grade, planar-gate, SiC MOSFET. The goal is to evaluate the effect of different external gate resistance Rg magnitudes. We have captured the gate-source voltage (VGS) waveforms during DGS tests at two different Rg values, namely 0 Ω and 6.8 Ω. Results have shown 2% and 1% Vth drifts in the two cases. In either case, we noticed a negligible impact on the on-state resistance (RDS,ON). No significant variations in the VGS switching gradients were observed either.
Dynamic Gate Stress: Advanced Characterization of an Automotive Grade Planar-Gate 1200 V SiC MOSFET
Sitta A.;Rundo F.;Sequenzia G.;Iannuzzo F.
2025-01-01
Abstract
Silicon carbide (SiC) power MOSFETs use in different fields of application leads to increase the attention on reliability issues and long-term stability. Among these, threshold voltage (Vth) stability is one of the main topics. In this work, we have carried out dynamic gate stress (DGS) reliability tests on an automotive grade, planar-gate, SiC MOSFET. The goal is to evaluate the effect of different external gate resistance Rg magnitudes. We have captured the gate-source voltage (VGS) waveforms during DGS tests at two different Rg values, namely 0 Ω and 6.8 Ω. Results have shown 2% and 1% Vth drifts in the two cases. In either case, we noticed a negligible impact on the on-state resistance (RDS,ON). No significant variations in the VGS switching gradients were observed either.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
