The realignment by rapid thermal annealing of polycrystalline silicon layers deposited onto <100> Si substrates can occur either through the planar movement of the interface towards the surface or through the lateral growth of columnar epitaxial islands. An anneal at 1075-degrees-C for 15 s, followed by As implantation, is shown to cause planar growth even at subsequent anneal temperatures as low as 900-degrees-C. In contrast, the direct annealing of As implanted samples induces columnar realignment. Further, the As redistribution throughout the polycrystalline layers and its diffusion in the crystalline substrate is considerably reduced in the case of the double step annealing. The different regrowth modes are related to the morphology of the interfacial oxide layer and to the microcrystalline structure of the polycrystalline layers during the initial stages of the realignment process.

REALIGNMENT OF ARSENIC DOPED POLYCRYSTALLINE SI FILMS BY DOUBLE STEP ANNEALING

PRIOLO, Francesco;
1991-01-01

Abstract

The realignment by rapid thermal annealing of polycrystalline silicon layers deposited onto <100> Si substrates can occur either through the planar movement of the interface towards the surface or through the lateral growth of columnar epitaxial islands. An anneal at 1075-degrees-C for 15 s, followed by As implantation, is shown to cause planar growth even at subsequent anneal temperatures as low as 900-degrees-C. In contrast, the direct annealing of As implanted samples induces columnar realignment. Further, the As redistribution throughout the polycrystalline layers and its diffusion in the crystalline substrate is considerably reduced in the case of the double step annealing. The different regrowth modes are related to the morphology of the interfacial oxide layer and to the microcrystalline structure of the polycrystalline layers during the initial stages of the realignment process.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/68917
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