Two hydrodynamic models of a semiconductor device are considered. The first takes into account thermal and collisional effects, while neglecting viscous terms, which are included in the second. A qualitative analysis of stationary one-dimensional solutions is performed and a numerical comparison is presented. © 1993, MCB UP Limited
Stationary solutions of hydrodynamic models for semiconductor device simulation
Russo Giovanni
1993-01-01
Abstract
Two hydrodynamic models of a semiconductor device are considered. The first takes into account thermal and collisional effects, while neglecting viscous terms, which are included in the second. A qualitative analysis of stationary one-dimensional solutions is performed and a numerical comparison is presented. © 1993, MCB UP LimitedFile in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
Stationary solutions of hydrodynamic models for semiconductor device simulation (Compel)_compressed.pdf
solo gestori archivio
Tipologia:
Versione Editoriale (PDF)
Licenza:
NON PUBBLICO - Accesso privato/ristretto
Dimensione
668.19 kB
Formato
Adobe PDF
|
668.19 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
