We present a general route to reduce inhomogeneous broadening in nanodevices due to 1/f noise. We apply this method to a universal two-qubit gate and demonstrate that for selected optimal couplings, a high-efficient gate can be implemented even in the presence of 1/f noise. Entanglement degradation due to interplay of 1/f and quantum noise is quantified via the concurrence. A charge-phase root i-SWAP gate for spectra extrapolated from single-qubit experiments is analyzed.
Optimal tuning of solid-state quantum gates: A universal two-qubit gate
PALADINO, ELISABETTA;FALCI, Giuseppe
2010-01-01
Abstract
We present a general route to reduce inhomogeneous broadening in nanodevices due to 1/f noise. We apply this method to a universal two-qubit gate and demonstrate that for selected optimal couplings, a high-efficient gate can be implemented even in the presence of 1/f noise. Entanglement degradation due to interplay of 1/f and quantum noise is quantified via the concurrence. A charge-phase root i-SWAP gate for spectra extrapolated from single-qubit experiments is analyzed.File in questo prodotto:
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