We present a general route to reduce inhomogeneous broadening in nanodevices due to 1/f noise. We apply this method to a universal two-qubit gate and demonstrate that for selected optimal couplings, a high-efficient gate can be implemented even in the presence of 1/f noise. Entanglement degradation due to interplay of 1/f and quantum noise is quantified via the concurrence. A charge-phase root i-SWAP gate for spectra extrapolated from single-qubit experiments is analyzed.

Optimal tuning of solid-state quantum gates: A universal two-qubit gate

PALADINO, ELISABETTA;FALCI, Giuseppe
2010-01-01

Abstract

We present a general route to reduce inhomogeneous broadening in nanodevices due to 1/f noise. We apply this method to a universal two-qubit gate and demonstrate that for selected optimal couplings, a high-efficient gate can be implemented even in the presence of 1/f noise. Entanglement degradation due to interplay of 1/f and quantum noise is quantified via the concurrence. A charge-phase root i-SWAP gate for spectra extrapolated from single-qubit experiments is analyzed.
File in questo prodotto:
File Dimensione Formato  
PRB-81-paladino-2010.pdf

solo gestori archivio

Tipologia: Versione Editoriale (PDF)
Licenza: NON PUBBLICO - Accesso privato/ristretto
Dimensione 832.93 kB
Formato Adobe PDF
832.93 kB Adobe PDF   Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/7929
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 32
  • ???jsp.display-item.citation.isi??? 29
social impact