In this work we studied the As redistribution in SiO270 nm / Si30 nm /SiO270 nm multilayer during postimplantation annealing. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO2 interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect could be qualitatively in agreement with a model that assumes a traps distribution into the Si in the first 2–3 nm above the SiO2 / Si interfaces and along the Si grain boundaries. In particular, the traps concentration at the Si/SiO2 interfaces was estimated in 1014 traps/cm2. © 2010 American Institute of Physics.
As doping of Si-based low-dimensional systems
RUFFINO, FRANCESCO;MIRITELLO, MARIA PILAR;GRIMALDI, Maria Grazia
2010-01-01
Abstract
In this work we studied the As redistribution in SiO270 nm / Si30 nm /SiO270 nm multilayer during postimplantation annealing. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO2 interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect could be qualitatively in agreement with a model that assumes a traps distribution into the Si in the first 2–3 nm above the SiO2 / Si interfaces and along the Si grain boundaries. In particular, the traps concentration at the Si/SiO2 interfaces was estimated in 1014 traps/cm2. © 2010 American Institute of Physics.File | Dimensione | Formato | |
---|---|---|---|
As doping of Si based low-dimensional systems.pdf
solo gestori archivio
Tipologia:
Versione Editoriale (PDF)
Licenza:
NON PUBBLICO - Accesso privato/ristretto
Dimensione
274.26 kB
Formato
Adobe PDF
|
274.26 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.