In this work we studied the As redistribution in SiO270 nm / Si30 nm /SiO270 nm multilayer during postimplantation annealing. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO2 interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect could be qualitatively in agreement with a model that assumes a traps distribution into the Si in the first 2–3 nm above the SiO2 / Si interfaces and along the Si grain boundaries. In particular, the traps concentration at the Si/SiO2 interfaces was estimated in 1014 traps/cm2. © 2010 American Institute of Physics.

As doping of Si-based low-dimensional systems

RUFFINO, FRANCESCO;MIRITELLO, MARIA PILAR;GRIMALDI, Maria Grazia
2010

Abstract

In this work we studied the As redistribution in SiO270 nm / Si30 nm /SiO270 nm multilayer during postimplantation annealing. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO2 interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect could be qualitatively in agreement with a model that assumes a traps distribution into the Si in the first 2–3 nm above the SiO2 / Si interfaces and along the Si grain boundaries. In particular, the traps concentration at the Si/SiO2 interfaces was estimated in 1014 traps/cm2. © 2010 American Institute of Physics.
Si nanocrystals; As; Doping
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/8183
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