In this paper, we present results of a discontinuous Galerkin (DG) scheme applied to deterministic computations of the transients for the Boltzmann–Poisson system describing electron transport in semiconductor devices. The collisional term models optical-phonon interactions which become dominant under strong energetic conditions corresponding to nano-scale active regions under applied bias. The proposed numerical technique is a ﬁnite element method using discontinuous piecewise polynomials as basis functions on unstructured meshes. It is applied to simulate hot electron transport in bulk silicon, in a silicon n+ — n — n+ diode and in a double gated 12 nm MOSFET. Additionally, the obtained results are compared to those of a high order WENO scheme simulation and DSMC (Discrete Simulation Monte Carlo) solvers.
|Titolo:||A discontinuous Galerkin solver for Boltzmann-Poisson systems in nano devices|
|Data di pubblicazione:||2009|
|Citazione:||A discontinuous Galerkin solver for Boltzmann-Poisson systems in nano devices / CHENG Y; GAMBA I; MAJORANA A; SHU C.-W. - In: COMPUTER METHODS IN APPLIED MECHANICS AND ENGINEERING. - ISSN 0045-7825. - 198(2009), pp. 3130-3150.|
|Appare nelle tipologie:||1.1 Articolo in rivista|