We have used scanning capacitance microscopy to determine two-dimensional carrier distributions in 6H-SiC on both epitaxial layers and implanted samples. Measurements were carried out on cross-sections using metal-covered Si tips. The sample preparation, surface passivation and tip selection have been investigated to obtain an optimised procedure. Implants were performed on p-type 6H-SiC at a substrate temperature of 500 degreesC with N ions at different fluences. The defect profiles were determined by Rutherford backscattering spectrometry. The influence of the implanted damage on the measurements has been investigated by implanted Si-self ions. (C) 2001 Elsevier Science Ltd. All rights reserved.
|Titolo:||Carrier concentration profiles in 6H-SiC by scanning capacitance microscopy|
|Data di pubblicazione:||2001|
|Citazione:||Carrier concentration profiles in 6H-SiC by scanning capacitance microscopy / Giannazzo F; Musumeci P; Calcagno L; Makhtari A; Raineri V. - In: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. - ISSN 1369-8001. - 4:1-3(2001), pp. 195-199.|
|Appare nelle tipologie:||1.1 Articolo in rivista|