We have used scanning capacitance microscopy to determine two-dimensional carrier distributions in 6H-SiC on both epitaxial layers and implanted samples. Measurements were carried out on cross-sections using metal-covered Si tips. The sample preparation, surface passivation and tip selection have been investigated to obtain an optimised procedure. Implants were performed on p-type 6H-SiC at a substrate temperature of 500 degreesC with N ions at different fluences. The defect profiles were determined by Rutherford backscattering spectrometry. The influence of the implanted damage on the measurements has been investigated by implanted Si-self ions. (C) 2001 Elsevier Science Ltd. All rights reserved.
Carrier concentration profiles in 6H-SiC by scanning capacitance microscopy
MUSUMECI, Paolo;CALCAGNO, Lucia;
2001-01-01
Abstract
We have used scanning capacitance microscopy to determine two-dimensional carrier distributions in 6H-SiC on both epitaxial layers and implanted samples. Measurements were carried out on cross-sections using metal-covered Si tips. The sample preparation, surface passivation and tip selection have been investigated to obtain an optimised procedure. Implants were performed on p-type 6H-SiC at a substrate temperature of 500 degreesC with N ions at different fluences. The defect profiles were determined by Rutherford backscattering spectrometry. The influence of the implanted damage on the measurements has been investigated by implanted Si-self ions. (C) 2001 Elsevier Science Ltd. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
