The state-of-the-art in the preparation and characterization of epitaxial semiconducting silicides will be reviewed in this report. Emphasis will be put on thin FeSi2 layers epitaxially grown on Si substrates. The mechanisms of silicide formation will be discussed through results obtained by a large variety of in-situ techniques (RHEED, Auger, photoemission,...) and ex-situ techniques (X-ray diffraction, RBS, electron microscopy). Moreover, for ultra-thin FeSi2 films, several strained pseudomorphic and metallic phases induced by epitaxy are observed on top of Si substrates. Their transition towards the stable relaxed semiconducting beta-FeSi2 will be presented. Recent findings of the metallic alpha-FeSi2 phase observed at surprisingly low temperature and its relaxation towards the beta-phase will also be reported.
SYNTHESIS AND PROPERTIES OF EPITAXIAL SEMICONDUCTING SILICIDES
GRIMALDI, Maria Grazia
1993-01-01
Abstract
The state-of-the-art in the preparation and characterization of epitaxial semiconducting silicides will be reviewed in this report. Emphasis will be put on thin FeSi2 layers epitaxially grown on Si substrates. The mechanisms of silicide formation will be discussed through results obtained by a large variety of in-situ techniques (RHEED, Auger, photoemission,...) and ex-situ techniques (X-ray diffraction, RBS, electron microscopy). Moreover, for ultra-thin FeSi2 films, several strained pseudomorphic and metallic phases induced by epitaxy are observed on top of Si substrates. Their transition towards the stable relaxed semiconducting beta-FeSi2 will be presented. Recent findings of the metallic alpha-FeSi2 phase observed at surprisingly low temperature and its relaxation towards the beta-phase will also be reported.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
