Epitaxial beta-FeSi2 layers thermally grown on (111) Si substrates have been irradiated by 25 ns ruby laser pulses in the energy density range 0.3-0.7 J/cm2. Rutherford backscattering analyses in combination with the channeling effect have shown that the silicide stoichiometry does not change for irradiations up to an energy density of 0.5 J/cm2, while alignment of the irradiated silicide along the  substrate normal direction is observed. Transmission electron diffraction in the plan view configuration showed that this silicide phase has a cubic symmetry with a lattice parameter very similar to that of Si. Diffraction patterns taken along different poles of the substrate indicated that the epitaxial phase is 180-degrees rotated about the  normal direction like the B type NiSi2 and CoSi2 silicides.
File in questo prodotto:
Non ci sono file associati a questo prodotto.