The maximum entropy principle is used to get a consistent hydrodynamical model for the transport of holes in semiconductors. Heavy, light and splitoff valence bands are considered. The first two are described by the warped functions while for the split-off band a parabolic approximation is used. Intraand inter-band scatterings of holes with non-polar optical phonons, acoustic phonons and impurities are taken into account along with the generationrecombination mechanism. Limiting energy-transport and drift-diffusion models are deduced and simulations in bulk silicon are performed.
|Titolo:||The maximum entropy principle hydrodynamical model for holes in silicon semiconductors: the case of the warped bands|
|Autori interni:||ROMANO, Vittorio|
|Data di pubblicazione:||2008|
|Rivista:||JOURNAL OF PHYSICS. A, MATHEMATICAL AND THEORETICAL|
|Appare nelle tipologie:||1.1 Articolo in rivista|