Amorphous aluminum oxide thin films have been produced with low pressure metal organic chemical vapor deposition technique using the aluminum tris-dipivaloylmethanate volatile precursor. Different carrier gases were used for the depositions. The surfaces of the films were analyzed using x-ray photoelectron spectroscopy and secondary ion mass spectrometry. A very low content of carbon was verified when oxygen and water vapor saturated argon were used as carrier gases. A higher hydration percentage of the deposited material was verified when water vapor was present during the deposition process. (C) 1995 American Institute of Physics.

Synthesis of aluminum oxide thin films: use of aluminum tris-dipivaloylmethanate as a new low pressure metalorganic chemical vapor deposition precursor

CILIBERTO, Enrico;SPOTO, Giuseppe;
1995

Abstract

Amorphous aluminum oxide thin films have been produced with low pressure metal organic chemical vapor deposition technique using the aluminum tris-dipivaloylmethanate volatile precursor. Different carrier gases were used for the depositions. The surfaces of the films were analyzed using x-ray photoelectron spectroscopy and secondary ion mass spectrometry. A very low content of carbon was verified when oxygen and water vapor saturated argon were used as carrier gases. A higher hydration percentage of the deposited material was verified when water vapor was present during the deposition process. (C) 1995 American Institute of Physics.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/9727
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