PULSED-LASER MELTING AND RESOLIDIFICATION OF METAL SILICIDE LAYERS

Baeri, P; Grimaldi, Maria Grazia; Lavia, F; Spinella, C; Spoto, Giuseppe

doi:10.1007/BF00566038

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Ti, Fe, and Co silicide layers, 80-200 nm thick, on top of single crystal silicon substrate have been melted by 25-ns ruby laser pulses and the resolidified structures have been analyzed by transmission electron microscopy, X-ray diffraction, and Rurtherford backscattering spectrometry. Metastable phases and/or epitaxial layers are obtained upon solidifcation, The transient molten layer has been monitored by means of time-resolved optical measurements with nanosecond resolution; in all cases solidification velocity of the order of 1 m.s-1 was observed, and in one case liquid undercooling as much as 800 K was estimated.

Titolo:	PULSED-LASER MELTING AND RESOLIDIFICATION OF METAL SILICIDE LAYERS
Autori interni:	BAERI P GRIMALDI, Maria Grazia LAVIA F SPINELLA C SPOTO, Giuseppe mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	1993
Rivista:	INTERNATIONAL JOURNAL OF THERMOPHYSICS
Citazione:	PULSED-LASER MELTING AND RESOLIDIFICATION OF METAL SILICIDE LAYERS / BAERI P; GRIMALDI MG; LAVIA F; SPINELLA C; SPOTO G. - In: INTERNATIONAL JOURNAL OF THERMOPHYSICS. - ISSN 0195-928X. - 14:3(1993), pp. 383-396.
Abstract:	Ti, Fe, and Co silicide layers, 80-200 nm thick, on top of single crystal silicon substrate have been melted by 25-ns ruby laser pulses and the resolidified structures have been analyzed by transmission electron microscopy, X-ray diffraction, and Rurtherford backscattering spectrometry. Metastable phases and/or epitaxial layers are obtained upon solidifcation, The transient molten layer has been monitored by means of time-resolved optical measurements with nanosecond resolution; in all cases solidification velocity of the order of 1 m.s-1 was observed, and in one case liquid undercooling as much as 800 K was estimated.
Handle:	http://hdl.handle.net/20.500.11769/9728
Appare nelle tipologie:	1.1 Articolo in rivista

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