Ti, Fe, and Co silicide layers, 80-200 nm thick, on top of single crystal silicon substrate have been melted by 25-ns ruby laser pulses and the resolidified structures have been analyzed by transmission electron microscopy, X-ray diffraction, and Rurtherford backscattering spectrometry. Metastable phases and/or epitaxial layers are obtained upon solidifcation, The transient molten layer has been monitored by means of time-resolved optical measurements with nanosecond resolution; in all cases solidification velocity of the order of 1 m.s-1 was observed, and in one case liquid undercooling as much as 800 K was estimated.
PULSED-LASER MELTING AND RESOLIDIFICATION OF METAL SILICIDE LAYERS
GRIMALDI, Maria Grazia;SPOTO, Giuseppe
1993
Abstract
Ti, Fe, and Co silicide layers, 80-200 nm thick, on top of single crystal silicon substrate have been melted by 25-ns ruby laser pulses and the resolidified structures have been analyzed by transmission electron microscopy, X-ray diffraction, and Rurtherford backscattering spectrometry. Metastable phases and/or epitaxial layers are obtained upon solidifcation, The transient molten layer has been monitored by means of time-resolved optical measurements with nanosecond resolution; in all cases solidification velocity of the order of 1 m.s-1 was observed, and in one case liquid undercooling as much as 800 K was estimated.File in questo prodotto:
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