Angle-resolved photoemissions studies were conducted on single-crystal (TaSe4)(2)I samples above and below the charge-density-wave transition temperature (T-CDW) of 260 K. We observed a shift of the leading photoemission edge between 300 and 60 K consistent with resistivity measurements performed on the same sample: a band gap opens throughout the Brillouin zone below T-CDW. However, several aspects of the data are difficult to reconcile with any standard model. RI Margaritondo, Giorgio/B-1367-2008

TEMPERATURE-DEPENDENCE OF ELECTRONIC STATES IN (TASE4)(2)I

TERRASI, Antonio;
1995

Abstract

Angle-resolved photoemissions studies were conducted on single-crystal (TaSe4)(2)I samples above and below the charge-density-wave transition temperature (T-CDW) of 260 K. We observed a shift of the leading photoemission edge between 300 and 60 K consistent with resistivity measurements performed on the same sample: a band gap opens throughout the Brillouin zone below T-CDW. However, several aspects of the data are difficult to reconcile with any standard model. RI Margaritondo, Giorgio/B-1367-2008
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/12150
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