We use the Raviart-Thomas-Nédéléc apscc to discretize the cuncnt continuity egua" tions of the drift-diftrsion semiconductor models with Mixed Finite Elemcnt mcthods in *9. An asymptotic analysis of the behaviour of the schcmc when the potential ir rcry large is gircn.
3-D Mixed finite element schemes for charge transport equations
PIDATELLA, Rosa Maria
1991-01-01
Abstract
We use the Raviart-Thomas-Nédéléc apscc to discretize the cuncnt continuity egua" tions of the drift-diftrsion semiconductor models with Mixed Finite Elemcnt mcthods in *9. An asymptotic analysis of the behaviour of the schcmc when the potential ir rcry large is gircn.File in questo prodotto:
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