An existence and uniqueness result for a two-temperature energy-transport model is proved, in the one-dimensional steady-state case, considering a bounded domain and physically appropriate boundary conditions. The model arises in the description of heat effects in semiconductors, the two temperatures account for the electron and the lattice temperature
Existence and uniqueness for a two-temperature energy-transport model for semiconductors
ROMANO, Vittorio
2017-01-01
Abstract
An existence and uniqueness result for a two-temperature energy-transport model is proved, in the one-dimensional steady-state case, considering a bounded domain and physically appropriate boundary conditions. The model arises in the description of heat effects in semiconductors, the two temperatures account for the electron and the lattice temperatureFile in questo prodotto:
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