In the last two decades, the Maximum Entropy Principle (MEP) has been successfully employed to construct macroscopic models able to describe the charge and heat transport in semiconductor devices. These models are obtained, starting from the Boltzmann transport equations, for the charge and the phonon distribution functions, by taking—as macroscopic variables—suitable moments of the distributions and exploiting MEP in order to close the evolution equations for the chosen moments. Important results have also been obtained for the description of charge transport in devices made both of elemental and compound semiconductors, in cases where charge confinement is present and the carrier flow is two- or one-dimensional.
|Titolo:||Exploitation of the Maximum Entropy Principle in Mathematical Modeling of Charge Transport in Semiconductors|
|Data di pubblicazione:||2017|
|Citazione:||Exploitation of the Maximum Entropy Principle in Mathematical Modeling of Charge Transport in Semiconductors / G. Mascali; Romano V. - In: ENTROPY. - ISSN 1099-4300. - 19:1(2017).|
|Appare nelle tipologie:||1.1 Articolo in rivista|