Silicon, SiO2 and Si3N4 surfaces were treated with three different types of commercial plasma containing CF4. The spectra obtained in electron spectroscopy for chemical analysis of these surfaces show relatively low carbon and fluorine contamination. The latter contaminant was found on SiO2 or Si3N4 surfaces but was no longer present on the silicon-like surfaces after treatment. The results are interpreted in terms of known mechanisms of plasma etching. © 1983.

Study by electron spectroscopy for chemical analysis of silicon, SiO2 and Si3N4 surfaces treated with various CF4-containing plasmas

LICCIARDELLO, Antonino;PIGNATARO, Salvatore;
1983

Abstract

Silicon, SiO2 and Si3N4 surfaces were treated with three different types of commercial plasma containing CF4. The spectra obtained in electron spectroscopy for chemical analysis of these surfaces show relatively low carbon and fluorine contamination. The latter contaminant was found on SiO2 or Si3N4 surfaces but was no longer present on the silicon-like surfaces after treatment. The results are interpreted in terms of known mechanisms of plasma etching. © 1983.
surfaces, cold plasma, thin films
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/298262
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