An extended hydrodynamic model self-consistently coupled to the 2D Schr¨odinger and 3D Poisson equations is introduced, to describe charge transport in Silicon Nanowires. It is been formulated by taking the moments of the multisubband Boltzmann equation, and the closure relations for the fluxes and production terms have been obtained by means of the Maximum Entropy Principle. The low-field mobility for a Gate-All-Around in a SiNWtransistor has been evaluated.
Journal of Physics: Conference Series. Hydrodynamic modeling of electron transport in silicon quantum wires
muscato o.
;castiglione t.;coco a.
2017-01-01
Abstract
An extended hydrodynamic model self-consistently coupled to the 2D Schr¨odinger and 3D Poisson equations is introduced, to describe charge transport in Silicon Nanowires. It is been formulated by taking the moments of the multisubband Boltzmann equation, and the closure relations for the fluxes and production terms have been obtained by means of the Maximum Entropy Principle. The low-field mobility for a Gate-All-Around in a SiNWtransistor has been evaluated.File in questo prodotto:
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