The electro-thermal transport in silicon carbide semiconductors can be described by an extended hydrodynamic model, obtained by taking moments from kinetic equations, and using the Maximum Entropy Principle. By performing appropriate scaling, one can obtain reduced transport models such as the Energy transport and the drift-diffusion ones, where the transport coecients are explicitly determined.
|Titolo:||A hierarchy of hydrodynamic models for silicon carbide semiconductors|
MUSCATO, Orazio (Corresponding)
|Data di pubblicazione:||2017|
|Appare nelle tipologie:||1.1 Articolo in rivista|