The authors present the results of the simulation, by means of a recently introduced transport and reaction model, of the sputter depth proﬁling of delta layers in a polymer system that undergoes mild modiﬁcation during the measurement, such as in the case of XPSproﬁling with large cluster ion beams. They ﬁnd that, even in the absence of roughening and at constant beam-induced mixing effects, the variations of sputtering yield caused by sample damage produce non-negligible changes in depth resolution.
|Titolo:||Effect of sputtering yield changes on the depth resolution in cluster beam depth-profiling of polymers|
|Data di pubblicazione:||2018|
|Appare nelle tipologie:||1.1 Articolo in rivista|